NP55N055SDG-E1-AY
- Mfr.Part #
- NP55N055SDG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 55A TO252
- Stock
- 36,413
- In Stock :
- 36,413
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Published :
- 2005
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 1.2W Ta 77W Tc
- Configuration :
- Single
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 71 ns
- Turn On Delay Time :
- 17 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 55V
- Operating Temperature :
- 175°C TJ
- Fall Time (Typ) :
- 6 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 9.5m Ω @ 28A, 10V
- Continuous Drain Current (ID) :
- 55A
- Rise Time :
- 16ns
- Power Dissipation :
- 1.2W
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Radiation Hardening :
- No
- Datasheets
- NP55N055SDG-E1-AY

N-Channel Tape & Reel (TR) 9.5m Ω @ 28A, 10V ±20V 4800pF @ 25V 96nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
NP55N055SDG-E1-AY Overview
A device's maximal input capacitance is 4800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 55A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 71 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NP55N055SDG-E1-AY Features
a continuous drain current (ID) of 55A
the turn-off delay time is 71 ns
a 55V drain to source voltage (Vdss)
NP55N055SDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP55N055SDG-E1-AY applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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