NP55N055SDG-E1-AY

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Mfr.Part #
NP55N055SDG-E1-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 55V 55A TO252
Stock
36,413
In Stock :
36,413

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
96nC @ 10V
Published :
2005
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Pin Count :
3
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Power Dissipation-Max :
1.2W Ta 77W Tc
Configuration :
Single
Mount :
Surface Mount
Turn-Off Delay Time :
71 ns
Turn On Delay Time :
17 ns
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
55V
Operating Temperature :
175°C TJ
Fall Time (Typ) :
6 ns
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
9.5m Ω @ 28A, 10V
Continuous Drain Current (ID) :
55A
Rise Time :
16ns
Power Dissipation :
1.2W
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Radiation Hardening :
No
Datasheets
NP55N055SDG-E1-AY
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP55N055SDG-E1-AY from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, NP55N055SDG-E1-AY pinout, NP55N055SDG-E1-AY datasheet PDF, NP55N055SDG-E1-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP55N055SDG-E1-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) NP55N055SDG-E1-AY


N-Channel Tape & Reel (TR) 9.5m Ω @ 28A, 10V ±20V 4800pF @ 25V 96nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63

NP55N055SDG-E1-AY Overview


A device's maximal input capacitance is 4800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 55A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 71 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NP55N055SDG-E1-AY Features


a continuous drain current (ID) of 55A
the turn-off delay time is 71 ns
a 55V drain to source voltage (Vdss)


NP55N055SDG-E1-AY Applications


There are a lot of Renesas Electronics America
NP55N055SDG-E1-AY applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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