NP55N03SUG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

220A

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

175°C TJ

Power Dissipation-Max :

1.2W Ta 77W Tc

Radiation Hardening :

No

Rise Time :

52ns

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Continuous Drain Current (ID) :

55A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Published :

2008

Drain-source On Resistance-Max :

0.005ohm

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

73 ns

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Power Dissipation :

1.2W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Number of Terminations :

2

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

FET Type :

N-Channel

Turn On Delay Time :

32 ns

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

5m Ω @ 28A, 10V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1