NP36P06SLG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Fall Time (Typ) :

110 ns

Operating Temperature :

175°C TJ

Published :

2007

Lead Free :

Lead Free

Pin Count :

3

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.2W

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Terminal Position :

Single

Power Dissipation-Max :

1.2W Ta 56W Tc

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

60V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

36A

Number of Elements :

1

Drain to Source Voltage (Vdss) :

60V

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 10V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

30m Ω @ 18A, 10V

Turn-Off Delay Time :

190 ns

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Rise Time :

12ns

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.04Ohm

Transistor Application :

SWITCHING

Vgs (Max) :

±20V