NP36P04SDG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

250 ns

Rds On (Max) @ Id, Vgs :

17m Ω @ 18A, 10V

Rise Time :

10ns

Operating Temperature :

175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

140 ns

Published :

2008

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

3

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0235Ohm

Power Dissipation-Max :

1.2W Ta 56W Tc

ECCN Code :

EAR99

Turn On Delay Time :

8 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Factory Lead Time :

26 Weeks

Continuous Drain Current (ID) :

36A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Voltage (Vdss) :

40V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Avalanche Energy Rating (Eas) :

67 mJ

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

40V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 10V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Number of Elements :

1

FET Type :

P-Channel

Power Dissipation :

1.2W

JEDEC-95 Code :

TO-252AA