NP32N055SLE-E1-AY
- Mfr.Part #
- NP32N055SLE-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 32A TO252
- Stock
- 17,058
- In Stock :
- 17,058
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 5V
- Rise Time :
- 8ns
- Turn-Off Delay Time :
- 40 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 16A, 10V
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Published :
- 1997
- Operating Temperature :
- 175°C TJ
- Turn On Delay Time :
- 14 ns
- Factory Lead Time :
- 16 Weeks
- Continuous Drain Current (ID) :
- 32A
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 55V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 25V
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 7.4 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Power Dissipation :
- 1.2W
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 1.2W Ta 66W Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Datasheets
- NP32N055SLE-E1-AY

N-Channel Tape & Reel (TR) 24m Ω @ 16A, 10V ±20V 2000pF @ 25V 41nC @ 5V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
NP32N055SLE-E1-AY Description
These products are N-channel MOS Field Effect Transistors designed for high-current switching applications.
NP32N055SLE-E1-AY Features
Halogen-free According to IEC 61249-2-21Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Compliant with RoHS Directive 2002/95/EC
NP32N055SLE-E1-AY Applications
CPU Power Delivery
DC−DC Converters
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