NP32N055SHE-E1-AY
- Mfr.Part #
- NP32N055SHE-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 32A TO252
- Stock
- 2,500
- In Stock :
- 2,500
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 29 ns
- Product Status :
- Obsolete
- Max Power Dissipation :
- 1.2 W
- Continuous Drain Current (ID) :
- 32 A
- Turn-On Delay Time :
- 16 ns
- FET Type :
- N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rise Time :
- 11 ns
- Package :
- Bulk
- Technology :
- MOSFET (Metal Oxide)
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 32A (Tc)
- Series :
- -
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 16A, 10V
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55 °C
- Factory Lead Time :
- 1 Week
- Manufacturer :
- Renesas Electronics Corporation
- Channel Type :
- N
- Gate Charge (Qg) (Max) @ Vgs :
- 32 nC @ 10 V
- Drain to Source Voltage (Vdss) :
- 55 V
- Input Capacitance :
- 1.6 nF
- Reach Compliance Code :
- Unknown
- FET Feature :
- -
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20 V
- RoHS :
- Compliant
- Continuous Drain Current Id :
- 32
- Supplier Device Package :
- TO-252 (MP-3ZK)
- Operating Temperature :
- 175°C (TJ)
- Radiation Hardening :
- No
- Power Dissipation (Max) :
- 1.2W (Ta), 66W (Tc)
- Rds On Max :
- 25 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600 pF @ 25 V
- Packaging :
- Tape and Reel
- Number of Pins :
- 3
- Max Operating Temperature :
- 175 °C
- Datasheets
- NP32N055SHE-E1-AY

MOSFET (Metal Oxide) N-Channel Tape & Reel 25mOhm @ 16A, 10V 1600 pF @ 25 V 32 nC @ 10 V 55 V TO-252-3, DPak (2 Leads + Tab), SC-63
NP32N055SHE-E1-AY Overview
A device's maximum input capacitance is 1600 pF @ 25 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 32 A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 29 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.To operate this transistor, you need to apply a 55 V drain to source voltage (Vdss).
NP32N055SHE-E1-AY Features
a continuous drain current (ID) of 32 A
the turn-off delay time is 29 ns
a 55 V drain to source voltage (Vdss)
NP32N055SHE-E1-AY Applications
There are a lot of Renesas
NP32N055SHE-E1-AY applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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