NJX1675PDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS

Packaging :

Tape and Reel (TR)

Transition Frequency :

100MHz

Max Power Dissipation :

2W

Lifecycle Status :

OBSOLETE (Last Updated: 1 day ago)

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN, PNP

JESD-609 Code :

e3

Radiation Hardening :

No

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 1A 2V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

Published :

2010

Max Collector Current :

3A

Transistor Type :

NPN, PNP

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

-7V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Number of Terminations :

8

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

115mV @ 200mA, 2A, 170mV @ 200mA, 2A

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

30V

Mounting Type :

Surface Mount

Power Dissipation :

2W

Transistor Element Material :

SILICON

Terminal Position :

Dual

Frequency - Transition :

100MHz 120MHz

Collector Emitter Voltage (VCEO) :

30V

Pin Count :

8

Gain Bandwidth Product :

100MHz

hFE Min :

100