NJW44H11G

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Mfr.Part #
NJW44H11G
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
TRANS NPN 80V 10A TO3P-3L
Stock
869
In Stock :
869

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Lead Free :
Lead Free
Package / Case :
TO-3P-3, SC-65-3
Current - Collector Cutoff (Max) :
10μA
Mount :
Through Hole
Continuous Collector Current :
10A
Operating Temperature :
-65°C~150°C TJ
Published :
2006
Packaging :
Tube
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
1V
Mounting Type :
Through Hole
Max Power Dissipation :
120W
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Gain Bandwidth Product :
85MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 4A 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
2 Weeks
Collector Emitter Voltage (VCEO) :
1V
Pbfree Code :
yes
Transistor Type :
NPN
Max Collector Current :
10A
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Emitter Breakdown Voltage :
80V
Element Configuration :
Single
Datasheets
NJW44H11G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJW44H11G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, NJW44H11G pinout, NJW44H11G datasheet PDF, NJW44H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJW44H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJW44H11G


NPN -65°C~150°C TJ 10μA TO-3P-3, SC-65-3 Tube Through Hole

NJW44H11G Overview


In this device, the DC current gain is 80 @ 4A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Maintaining the continuous collector voltage at 10A is essential for high efficiency.Maximum collector currents can be below 10A volts.

NJW44H11G Features


the DC current gain for this device is 80 @ 4A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A


NJW44H11G Applications


There are a lot of ON Semiconductor
NJW44H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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