NJW21193G
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- Mfr.Part #
- NJW21193G
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP 250V 16A TO3P-3L
- Stock
- 1,197
- In Stock ：
- 1,197
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transition Frequency :
- 4MHz
- Package / Case :
- TO-3P-3, SC-65-3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 20.1mm
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 8A 5V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 15.8mm
- Max Power Dissipation :
- 200W
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 350V
- Number of Pins :
- 3
- Power Dissipation :
- 200mW
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Frequency :
- 4MHz
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100μA
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 250V
- Collector Base Voltage (VCBO) :
- 400V
- Gain Bandwidth Product :
- 4MHz
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Max Collector Current :
- 16A
- Factory Lead Time :
- 23 Weeks
- Max Breakdown Voltage :
- 250V
- Width :
- 5mm
- hFE Min :
- 20
- Power - Max :
- 200W
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3.2A, 16A
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 4V
- Transistor Type :
- PNP
- Datasheets
- NJW21193G
PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Tube Through Hole
NJW21193G Overview
In this device, the DC current gain is 20 @ 8A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 3.2A, 16A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Input voltage breakdown is available at 250V volts.Single BJT transistor is possible for the collector current to fall as low as 16A volts at Single BJT transistors maximum.
NJW21193G Features
the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
NJW21193G Applications
There are a lot of ON Semiconductor
NJW21193G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJW21194G | onsemi | 1,096 | TRANS NPN 250V 16A TO3P-3L |
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