NJW1302G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

20.1mm

Package / Case :

TO-3P-3, SC-65-3

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Through Hole

Gain Bandwidth Product :

30MHz

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Number of Pins :

3

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

250V

Transition Frequency :

30MHz

ECCN Code :

EAR99

Factory Lead Time :

11 Weeks

Published :

2007

Vce Saturation (Max) @ Ib, Ic :

600mV @ 800mA, 8A

Current - Collector Cutoff (Max) :

50μA ICBO

Transistor Type :

PNP

Max Collector Current :

15A

Surface Mount :

No

Max Power Dissipation :

200W

Number of Elements :

1

Element Configuration :

Single

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

600mV

Width :

5mm

hFE Min :

75

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Transistor Application :

AMPLIFIER

Max Breakdown Voltage :

60V

Collector Emitter Breakdown Voltage :

250V

Length :

15.8mm

Radiation Hardening :

No

Power Dissipation :

200W

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Frequency :

30MHz

Collector Base Voltage (VCBO) :

250V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

75 @ 3A 5V