NJVBUB323ZT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

150W

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN - Darlington

Lead Free :

Lead Free

Transition Frequency :

2MHz

Number of Terminations :

2

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

1.7V

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Collector Emitter Breakdown Voltage :

350V

Transistor Application :

SWITCHING

Number of Elements :

1

Published :

2014

Max Power Dissipation :

150W

Operating Temperature :

-65°C~175°C TJ

Reference Standard :

AEC-Q101

JESD-30 Code :

R-PSSO-G2

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A 4.6V

Pbfree Code :

yes

Max Collector Current :

10A

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

Terminal Position :

Single

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

100μA

Packaging :

Tape and Reel (TR)

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

2MHz

Mount :

Surface Mount

JESD-609 Code :

e3

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount