NJL4302DG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

350V

ECCN Code :

EAR99

JESD-609 Code :

e3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Transistor Type :

PNP

Power Dissipation :

230W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Pin Count :

5

Current - Collector Cutoff (Max) :

100μA

Packaging :

Tube

Voltage - Rated DC :

260V

Polarity/Channel Type :

PNP

Published :

2006

Max Power Dissipation :

230W

Current Rating :

15A

Frequency :

35MHz

Operating Temperature :

-65°C~150°C TJ

Lead Free :

Lead Free

hFE Min :

80

Transition Frequency :

35MHz

Number of Pins :

5

Number of Terminations :

5

Gain Bandwidth Product :

35MHz

Number of Elements :

1

Max Collector Current :

15A

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

350V

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Package / Case :

TO-264-5

Additional Feature :

High Reliability

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5A 5V

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

350V

Vce Saturation (Max) @ Ib, Ic :

1V @ 800mA, 8A