NJL1302DG

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Mfr.Part #
NJL1302DG
Manufacturer
onsemi
Package / Case
TO-264-5
Datasheet
Download
Description
TRANS PNP 260V 15A TO264
Stock
3,412
In Stock :
3,412

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Time@Peak Reflow Temperature-Max (s) :
40
Frequency :
30MHz
Terminal Finish :
Tin (Sn)
Package / Case :
TO-264-5
Number of Elements :
1
Mount :
Through Hole
Published :
2005
Number of Pins :
5
Packaging :
Tube
Polarity :
PNP
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
yes
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Additional Feature :
High Reliability
Gain Bandwidth Product :
30MHz
Operating Temperature :
-65°C~150°C TJ
Element Configuration :
Single
Mounting Type :
Through Hole
Length :
19.89mm
Transition Frequency :
30MHz
Collector Emitter Saturation Voltage :
3V
Current Rating :
-15A
Transistor Application :
AMPLIFIER
Height :
25.98mm
Factory Lead Time :
13 Weeks
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
3V @ 1A, 10A
Power Dissipation :
200W
Radiation Hardening :
No
Voltage - Rated DC :
-260V
hFE Min :
75
JESD-609 Code :
e3
Width :
4.89mm
Max Collector Current :
15A
Pin Count :
5
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
75 @ 5A 5V
Collector Emitter Voltage (VCEO) :
260V
Current - Collector Cutoff (Max) :
50μA ICBO
Collector Emitter Breakdown Voltage :
260V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP + Diode (Isolated)
Collector Base Voltage (VCBO) :
260V
Number of Terminations :
5
Max Power Dissipation :
200W
Datasheets
NJL1302DG
Introducing Transistors - Bipolar (BJT) - Single onsemi NJL1302DG from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-264-5, Number of Pins:5, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:5, NJL1302DG pinout, NJL1302DG datasheet PDF, NJL1302DG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJL1302DG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJL1302DG


PNP + Diode (Isolated) -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON TO-264-5 Tube Through Hole

NJL1302DG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 5A 5V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 15A volts.

NJL1302DG Features


the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz


NJL1302DG Applications


There are a lot of ON Semiconductor
NJL1302DG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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