NJL1302DG

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Mfr.Part #
NJL1302DG
Manufacturer
onsemi
Package / Case
TO-264-5
Datasheet
Download
Description
TRANS PNP 260V 15A TO264
Stock
3,412
In Stock :
3,412

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
260V
Pin Count :
5
Packaging :
Tube
Max Power Dissipation :
200W
DC Current Gain (hFE) (Min) @ Ic, Vce :
75 @ 5A 5V
Package / Case :
TO-264-5
hFE Min :
75
REACH SVHC :
No SVHC
Published :
2005
Time@Peak Reflow Temperature-Max (s) :
40
Pbfree Code :
yes
Transition Frequency :
30MHz
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Transistor Application :
AMPLIFIER
Collector Emitter Breakdown Voltage :
260V
Number of Pins :
5
Gain Bandwidth Product :
30MHz
Frequency :
30MHz
Collector Emitter Saturation Voltage :
3V
Number of Terminations :
5
Current Rating :
-15A
Current - Collector Cutoff (Max) :
50μA ICBO
Power Dissipation :
200W
Factory Lead Time :
13 Weeks
Emitter Base Voltage (VEBO) :
5V
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
3V @ 1A, 10A
Transistor Type :
PNP + Diode (Isolated)
Additional Feature :
High Reliability
Polarity :
PNP
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
JESD-609 Code :
e3
Operating Temperature :
-65°C~150°C TJ
Transistor Element Material :
SILICON
Voltage - Rated DC :
-260V
Terminal Finish :
Tin (Sn)
Width :
4.89mm
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
260V
Height :
25.98mm
Max Collector Current :
15A
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
19.89mm
Number of Elements :
1
Datasheets
NJL1302DG
Introducing Transistors - Bipolar (BJT) - Single onsemi NJL1302DG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-264-5, Number of Pins:5, Number of Terminations:5, Operating Temperature:-65°C~150°C TJ, NJL1302DG pinout, NJL1302DG datasheet PDF, NJL1302DG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJL1302DG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJL1302DG


PNP + Diode (Isolated) -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON TO-264-5 Tube Through Hole

NJL1302DG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 5A 5V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 15A volts.

NJL1302DG Features


the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz


NJL1302DG Applications


There are a lot of ON Semiconductor
NJL1302DG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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