NJL1302DG
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- Mfr.Part #
- NJL1302DG
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS PNP 260V 15A TO264
- Stock
- 3,412
- In Stock ：
- 3,412
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 13 Weeks
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 3V
- Number of Terminations :
- 5
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2005
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Current Rating :
- -15A
- Pin Count :
- 5
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 25.98mm
- Max Power Dissipation :
- 200W
- Width :
- 4.89mm
- Gain Bandwidth Product :
- 30MHz
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- hFE Min :
- 75
- ECCN Code :
- EAR99
- Polarity :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Max Collector Current :
- 15A
- Length :
- 19.89mm
- Number of Pins :
- 5
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 30MHz
- Collector Emitter Voltage (VCEO) :
- 260V
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP + Diode (Isolated)
- Lead Free :
- Lead Free
- Transition Frequency :
- 30MHz
- Package / Case :
- TO-264-5
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 260V
- Voltage - Rated DC :
- -260V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- Power Dissipation :
- 200W
- Element Configuration :
- Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 260V
- Additional Feature :
- High Reliability
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- NJL1302DG
NJL1302DG Documents
PNP + Diode (Isolated) -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON TO-264-5 Tube Through Hole
NJL1302DG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 5A 5V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 15A volts.
NJL1302DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
NJL1302DG Applications
There are a lot of ON Semiconductor
NJL1302DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL1302D | onsemi | 15,581 | TRANS PNP 260V 15A TO264 |
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