NJL1302DG
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- Mfr.Part #
- NJL1302DG
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS PNP 260V 15A TO264
- Stock
- 3,412
- In Stock ：
- 3,412
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Frequency :
- 30MHz
- Mount :
- Through Hole
- Power Dissipation :
- 200W
- Height :
- 25.98mm
- Gain Bandwidth Product :
- 30MHz
- Width :
- 4.89mm
- Published :
- 2005
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transition Frequency :
- 30MHz
- Collector Base Voltage (VCBO) :
- 260V
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 13 Weeks
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 260V
- hFE Min :
- 75
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -260V
- Max Collector Current :
- 15A
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Number of Pins :
- 5
- Current Rating :
- -15A
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-264-5
- Pin Count :
- 5
- Number of Terminations :
- 5
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 3V
- Collector Emitter Breakdown Voltage :
- 260V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Polarity :
- PNP
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP + Diode (Isolated)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Additional Feature :
- High Reliability
- Max Power Dissipation :
- 200W
- Length :
- 19.89mm
- REACH SVHC :
- No SVHC
- Datasheets
- NJL1302DG
PNP + Diode (Isolated) -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON TO-264-5 Tube Through Hole
NJL1302DG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 5A 5V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 15A volts.
NJL1302DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
NJL1302DG Applications
There are a lot of ON Semiconductor
NJL1302DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL1302D | onsemi | 15,581 | TRANS PNP 260V 15A TO264 |
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