NJL1302DG
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- Mfr.Part #
- NJL1302DG
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS PNP 260V 15A TO264
- Stock
- 3,412
- In Stock ：
- 3,412
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 3V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Polarity :
- PNP
- Transition Frequency :
- 30MHz
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 30MHz
- Additional Feature :
- High Reliability
- Max Power Dissipation :
- 200W
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Transistor Type :
- PNP + Diode (Isolated)
- Collector Base Voltage (VCBO) :
- 260V
- Number of Terminations :
- 5
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 13 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- REACH SVHC :
- No SVHC
- Frequency :
- 30MHz
- JESD-609 Code :
- e3
- Package / Case :
- TO-264-5
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 5
- Height :
- 25.98mm
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Current Rating :
- -15A
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 260V
- Packaging :
- Tube
- hFE Min :
- 75
- Mount :
- Through Hole
- Published :
- 2005
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 4.89mm
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -260V
- Number of Pins :
- 5
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Collector Current :
- 15A
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 260V
- Power Dissipation :
- 200W
- Length :
- 19.89mm
- Datasheets
- NJL1302DG
NJL1302DG Documents
PNP + Diode (Isolated) -65°C~150°C TJ 50μA ICBO 1 Elements 5 Terminations SILICON TO-264-5 Tube Through Hole
NJL1302DG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 5A 5V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 30MHz in the part.When collector current reaches its maximum, it can reach 15A volts.
NJL1302DG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
NJL1302DG Applications
There are a lot of ON Semiconductor
NJL1302DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL1302D | onsemi | 15,581 | TRANS PNP 260V 15A TO264 |
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