NJL0281DG
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- Mfr.Part #
- NJL0281DG
- Manufacturer
- onsemi
- Package / Case
- TO-264-5
- Datasheet
- Download
- Description
- TRANS NPN 260V 15A TO264
- Stock
- 124
- In Stock ：
- 124
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 5
- Number of Pins :
- 5
- Packaging :
- Tube
- Number of Terminations :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 260V
- ECCN Code :
- EAR99
- Length :
- 20.02mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Lead Free :
- Lead Free
- Power Dissipation :
- 180W
- Transistor Application :
- AMPLIFIER
- Height :
- 26.111mm
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Polarity/Channel Type :
- NPN
- Current Rating :
- -15A
- Number of Elements :
- 1
- Max Collector Current :
- 15A
- Collector Emitter Breakdown Voltage :
- 260V
- hFE Min :
- 75
- Transition Frequency :
- 30MHz
- Width :
- 5.182mm
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 3A 5V
- Collector Base Voltage (VCBO) :
- 260V
- Terminal Finish :
- Tin (Sn)
- Additional Feature :
- High Reliability
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- -260V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-264-5
- Gain Bandwidth Product :
- 30MHz
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 180W
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Through Hole
- Frequency :
- 30MHz
- Published :
- 2006
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Datasheets
- NJL0281DG
NJL0281DG Documents
NPN -65°C~150°C TJ 10μA ICBO 1 Elements 5 Terminations SILICON NPN TO-264-5 Tube Through Hole
NJL0281DG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 3A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 500mA, 5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 30MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
NJL0281DG Features
the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz
NJL0281DG Applications
There are a lot of ON Semiconductor
NJL0281DG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NJL0302DG | onsemi | 43,917 | TRANS PNP 260V 15A TO264 |
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