NJL0281DG

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Mfr.Part #
NJL0281DG
Manufacturer
onsemi
Package / Case
TO-264-5
Datasheet
Download
Description
TRANS NPN 260V 15A TO264
Stock
124
In Stock :
124

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Reach Compliance Code :
not_compliant
Transistor Element Material :
SILICON
Height :
26.111mm
Frequency :
30MHz
Number of Pins :
5
Current Rating :
-15A
Lead Free :
Lead Free
Pin Count :
5
Polarity/Channel Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Voltage - Rated DC :
-260V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-264-5
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
260V
Vce Saturation (Max) @ Ib, Ic :
1V @ 500mA, 5A
Transition Frequency :
30MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
2 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Number of Elements :
1
Collector Base Voltage (VCBO) :
260V
Mounting Type :
Through Hole
Mount :
Through Hole
Max Power Dissipation :
180W
Transistor Application :
AMPLIFIER
Max Collector Current :
15A
Number of Terminations :
5
hFE Min :
75
Emitter Base Voltage (VEBO) :
5V
Terminal Finish :
Tin (Sn)
Element Configuration :
Single
Qualification Status :
Not Qualified
Additional Feature :
High Reliability
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
1V
Operating Temperature :
-65°C~150°C TJ
Gain Bandwidth Product :
30MHz
Packaging :
Tube
Current - Collector Cutoff (Max) :
10μA ICBO
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
260V
DC Current Gain (hFE) (Min) @ Ic, Vce :
75 @ 3A 5V
Published :
2006
Power Dissipation :
180W
Length :
20.02mm
Width :
5.182mm
Datasheets
NJL0281DG
Introducing Transistors - Bipolar (BJT) - Single onsemi NJL0281DG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Package / Case:TO-264-5, Mounting Type:Through Hole, Number of Terminations:5, Operating Temperature:-65°C~150°C TJ, NJL0281DG pinout, NJL0281DG datasheet PDF, NJL0281DG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJL0281DG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJL0281DG


NPN -65°C~150°C TJ 10μA ICBO 1 Elements 5 Terminations SILICON NPN TO-264-5 Tube Through Hole

NJL0281DG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 3A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 500mA, 5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 30MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

NJL0281DG Features


the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz


NJL0281DG Applications


There are a lot of ON Semiconductor
NJL0281DG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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