NJD1718T4G
- Mfr.Part #
- NJD1718T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A DPAK
- Stock
- 11,039
- In Stock :
- 11,039
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 500mV
- hFE Min :
- 70
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time :
- 8 Weeks
- Power - Max :
- 1.68W
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 80MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Frequency - Transition :
- 80MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Max Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.68W
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2006
- Contact Plating :
- Tin
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Datasheets
- NJD1718T4G

PNP -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJD1718T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 2A volts.
NJD1718T4G Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 80MHz
NJD1718T4G Applications
There are a lot of ON Semiconductor
NJD1718T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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