NJD1718T4G

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Mfr.Part #
NJD1718T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 50V 2A DPAK
Stock
11,039
In Stock :
11,039

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Surface Mount
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
PNP
Collector Base Voltage (VCBO) :
50V
Transistor Type :
PNP
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
500mV
hFE Min :
70
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time :
8 Weeks
Power - Max :
1.68W
Number of Elements :
1
Max Collector Current :
2A
Pin Count :
3
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 500mA 2V
Element Configuration :
Single
Mounting Type :
Surface Mount
Case Connection :
COLLECTOR
Transition Frequency :
80MHz
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature :
-65°C~150°C TJ
ECCN Code :
EAR99
Halogen Free :
Halogen Free
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 1A
Number of Pins :
3
Emitter Base Voltage (VEBO) :
-5V
Frequency - Transition :
80MHz
Collector Emitter Breakdown Voltage :
50V
Max Breakdown Voltage :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Max Power Dissipation :
1.68W
JESD-30 Code :
R-PSSO-G2
Published :
2006
Contact Plating :
Tin
Number of Terminations :
2
Pbfree Code :
yes
Datasheets
NJD1718T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJD1718T4G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Number of Terminations:2, NJD1718T4G pinout, NJD1718T4G datasheet PDF, NJD1718T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJD1718T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJD1718T4G


PNP -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NJD1718T4G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 2A volts.

NJD1718T4G Features


the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 80MHz


NJD1718T4G Applications


There are a lot of ON Semiconductor
NJD1718T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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