NJD1718T4G

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Mfr.Part #
NJD1718T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 50V 2A DPAK
Stock
11,039
In Stock :
11,039

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
50V
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
hFE Min :
70
Current - Collector Cutoff (Max) :
100nA ICBO
Element Configuration :
Single
Transition Frequency :
80MHz
Emitter Base Voltage (VEBO) :
-5V
Transistor Type :
PNP
Factory Lead Time :
8 Weeks
JESD-30 Code :
R-PSSO-G2
Lead Free :
Lead Free
Max Power Dissipation :
1.68W
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
80MHz
Number of Terminations :
2
JESD-609 Code :
e3
Max Collector Current :
2A
Contact Plating :
Tin
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Voltage (VCEO) :
500mV
Mounting Type :
Surface Mount
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 500mA 2V
Pbfree Code :
yes
Power - Max :
1.68W
Polarity/Channel Type :
PNP
Max Breakdown Voltage :
50V
Transistor Element Material :
SILICON
Mount :
Surface Mount
ECCN Code :
EAR99
Operating Temperature :
-65°C~150°C TJ
Terminal Form :
Gull wing
Published :
2006
Pin Count :
3
Collector Base Voltage (VCBO) :
50V
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 1A
Halogen Free :
Halogen Free
Number of Elements :
1
Case Connection :
COLLECTOR
Datasheets
NJD1718T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJD1718T4G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, NJD1718T4G pinout, NJD1718T4G datasheet PDF, NJD1718T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJD1718T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJD1718T4G


PNP -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NJD1718T4G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 2A volts.

NJD1718T4G Features


the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 80MHz


NJD1718T4G Applications


There are a lot of ON Semiconductor
NJD1718T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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