NGTG35N65FL2WG

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Length :

16.26mm

Number of Terminations :

3

Factory Lead Time :

6 Weeks

Switching Energy :

840μJ (on), 280μJ (off)

Max Collector Current :

70A

Published :

2015

Current - Collector Pulsed (Icm) :

120A

Height :

21.08mm

Turn Off Time-Nom (toff) :

231 ns

Max Power Dissipation :

300W

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Td (on/off) @ 25°C :

72ns/132ns

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

300W

Gate Charge :

125nC

Contact Plating :

Tin

Transistor Application :

POWER CONTROL

Turn On Time :

108 ns

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 35A

Collector Emitter Breakdown Voltage :

650V

Number of Elements :

1

Package / Case :

TO-247-3

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

1.7V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Input Type :

Standard

JESD-609 Code :

e3

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

IGBT Type :

Field Stop

Width :

5.3mm

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

650V

Test Condition :

400V, 35A, 10 Ω, 15V

Mount :

Through Hole