NGD18N40CLBT4
- Mfr.Part #
- NGD18N40CLBT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 430V 15A 115W DPAK
- Stock
- 1,274
- In Stock :
- 1,274
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Turn Off Time-Nom (toff) :
- 13000 ns
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Pbfree Code :
- No
- Number of Terminations :
- 2
- Collector Emitter Voltage (VCEO) :
- 2.5V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Polarity/Channel Type :
- N-Channel
- Max Power Dissipation :
- 115W
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- Number of Pins :
- 3
- Max Collector Current :
- 15A
- JESD-609 Code :
- e0
- Power Dissipation :
- 115W
- Base Part Number :
- NG*18N40CL
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Input Type :
- Logic
- Current - Collector Pulsed (Icm) :
- 50A
- Collector Emitter Breakdown Voltage :
- 430V
- Gate-Emitter Voltage-Max :
- 18V
- Number of Elements :
- 1
- Rise Time :
- 4.5ns
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Transistor Application :
- AUTOMOTIVE IGNITION
- Published :
- 2010
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Case Connection :
- COLLECTOR
- Gate-Emitter Thr Voltage-Max :
- 1.9V
- Reach Compliance Code :
- not_compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 4V, 15A
- Fall Time-Max (tf) :
- 15000ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn On Time :
- 5200 ns
- Current Rating :
- 18A
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- 240
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Rated DC :
- 400V
- Datasheets
- NGD18N40CLBT4

NGD18N40CLBT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGD18N40CLBT4 Description
NGD18N40CLBT4 is a 400v Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGD18N40CLBT4 is in the DPAK package with 115W power dissipation.
NGD18N40CLBT4 Features
Ideal for Coil-on-Plug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate- Emitter ESD Protection
Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
Low Threshold Voltage Interfaces Power Roads to Logic or Microprocessor Devices
NGD18N40CLBT4 Applications
Communications equipment
Wired networking
Industrial
Industrial transport (non-car & non-light truck)
Enterprise systems
Datacenter & enterprise computing
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