NGD18N40CLBT4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Packaging :

Tape and Reel (TR)

Gate-Emitter Thr Voltage-Max :

1.9V

Published :

2010

Voltage - Rated DC :

400V

Transistor Element Material :

SILICON

Input Type :

Logic

Current Rating :

18A

Case Connection :

COLLECTOR

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Vce(on) (Max) @ Vge, Ic :

2.5V @ 4V, 15A

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

50A

Pbfree Code :

No

Number of Pins :

3

Power Dissipation :

115W

JESD-30 Code :

R-PSSO-G2

Transistor Application :

AUTOMOTIVE IGNITION

Number of Elements :

1

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Pin Count :

3

Max Power Dissipation :

115W

Number of Terminations :

2

Turn On Time :

5200 ns

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

240

Gate-Emitter Voltage-Max :

18V

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Max Collector Current :

15A

Base Part Number :

NG*18N40CL

Rise Time :

4.5ns

Terminal Finish :

Tin/Lead (Sn80Pb20)

Collector Emitter Breakdown Voltage :

430V

Qualification Status :

Not Qualified

Collector Emitter Voltage (VCEO) :

2.5V

Operating Temperature :

-55°C~175°C TJ

Turn Off Time-Nom (toff) :

13000 ns

Fall Time-Max (tf) :

15000ns