NE25139-T1-U73

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

DS Breakdown Voltage-Min :

13V

Surface Mount :

yes

Operating Temperature (Max) :

125°C

Voltage - Test :

5V

Transistor Application :

AMPLIFIER

Current Rating :

40mA

Drain Current-Max (Abs) (ID) :

0.035A

Number of Terminations :

4

Number of Elements :

1

Configuration :

Single

Noise Figure :

1.1dB

Base Part Number :

NE251

Case Connection :

SOURCE

Packaging :

Tape and Reel (TR)

Gain :

20dB

Current - Test :

10mA

Terminal Form :

Gull wing

Transistor Type :

MESFET Dual Gate

RoHS Status :

Non-RoHS Compliant

Operating Mode :

DUAL GATE, DEPLETION MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

HTS Code :

8541.21.00.75

Additional Feature :

LOW NOISE

ECCN Code :

EAR99

Transistor Element Material :

GALLIUM ARSENIDE

FET Technology :

METAL SEMICONDUCTOR

Package / Case :

TO-253-4, TO-253AA

Feedback Cap-Max (Crss) :

0.03 pF

Voltage - Rated :

13V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G4

Frequency :

900MHz