NE25139-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

Continuous Drain Current (ID) :

40A

Noise Figure :

1.1dB

Transistor Application :

AMPLIFIER

Configuration :

Single

Mount :

Surface Mount

Additional Feature :

LOW NOISE

Current - Test :

10mA

Feedback Cap-Max (Crss) :

0.03 pF

FET Technology :

METAL SEMICONDUCTOR

Current Rating :

40mA

Voltage - Rated :

13V

DS Breakdown Voltage-Min :

13V

Voltage - Test :

5V

Transistor Type :

MESFET Dual Gate

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

4

Number of Elements :

1

Base Part Number :

NE251

Operating Temperature (Max) :

125°C

Transistor Element Material :

GALLIUM ARSENIDE

Case Connection :

SOURCE

Frequency :

900MHz

Terminal Form :

Gull wing

Operating Mode :

DUAL GATE, DEPLETION MODE

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Gain :

20dB

Polarity/Channel Type :

N-Channel

Number of Pins :

4

Package / Case :

TO-253-4, TO-253AA