NE25139-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Type :

MESFET Dual Gate

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Configuration :

Single

Transistor Element Material :

GALLIUM ARSENIDE

Number of Pins :

4

Frequency :

900MHz

Packaging :

Cut Tape (CT)

Current Rating :

40mA

Gain :

20dB

Voltage - Rated :

13V

Current - Test :

10mA

Mount :

Surface Mount

Base Part Number :

NE251

Package / Case :

TO-253-4, TO-253AA

Terminal Form :

Gull wing

Operating Temperature (Max) :

125°C

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

13V

Transistor Application :

AMPLIFIER

Feedback Cap-Max (Crss) :

0.03 pF

Noise Figure :

1.1dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Test :

5V

Additional Feature :

LOW NOISE

Operating Mode :

DUAL GATE, DEPLETION MODE

FET Technology :

METAL SEMICONDUCTOR

Case Connection :

SOURCE

Continuous Drain Current (ID) :

40A

Number of Terminations :

4