NE25139-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

Current Rating :

40mA

Feedback Cap-Max (Crss) :

0.03 pF

Continuous Drain Current (ID) :

40A

Polarity/Channel Type :

N-Channel

Operating Mode :

DUAL GATE, DEPLETION MODE

Operating Temperature (Max) :

125°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Case Connection :

SOURCE

Additional Feature :

LOW NOISE

Voltage - Rated :

13V

Number of Pins :

4

FET Technology :

METAL SEMICONDUCTOR

RoHS Status :

Non-RoHS Compliant

Configuration :

Single

Transistor Element Material :

GALLIUM ARSENIDE

Number of Elements :

1

DS Breakdown Voltage-Min :

13V

Gain :

20dB

Package / Case :

TO-253-4, TO-253AA

Packaging :

Cut Tape (CT)

Frequency :

900MHz

Mount :

Surface Mount

Qualification Status :

Not Qualified

Base Part Number :

NE251

Voltage - Test :

5V

Transistor Application :

AMPLIFIER

Current - Test :

10mA

Transistor Type :

MESFET Dual Gate

Number of Terminations :

4

Noise Figure :

1.1dB