NE25139-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Rated :

13V

Number of Terminations :

4

Feedback Cap-Max (Crss) :

0.03 pF

Gain :

20dB

Base Part Number :

NE251

Additional Feature :

LOW NOISE

Voltage - Test :

5V

Operating Temperature (Max) :

125°C

RoHS Status :

Non-RoHS Compliant

Current - Test :

10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

FET Technology :

METAL SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Frequency :

900MHz

Transistor Element Material :

GALLIUM ARSENIDE

Transistor Type :

MESFET Dual Gate

Package / Case :

TO-253-4, TO-253AA

Number of Pins :

4

Mount :

Surface Mount

Noise Figure :

1.1dB

Continuous Drain Current (ID) :

40A

Case Connection :

SOURCE

Configuration :

Single

Number of Elements :

1

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Current Rating :

40mA

DS Breakdown Voltage-Min :

13V

Packaging :

Cut Tape (CT)

Operating Mode :

DUAL GATE, DEPLETION MODE