NDT014L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Power Dissipation :

3W

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

Rise Time :

14ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

2.7A

Packaging :

Tape and Reel (TR)

Package / Case :

TO-261-4, TO-261AA

FET Type :

N-Channel

Published :

1998

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

15 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Resistance :

160mOhm

Lead Free :

Lead Free

Voltage - Rated DC :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

160m Ω @ 3.4A, 10V

Pbfree Code :

yes

Number of Pins :

4

Current Rating :

2.8A

REACH SVHC :

No SVHC

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6 ns

Dual Supply Voltage :

60V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

2.8A

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Height :

1.7mm

Weight :

188mg

Terminal Position :

Dual

Fall Time (Typ) :

10 ns

Width :

3.7mm

Length :

6.7mm

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

214pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.5V

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Termination :

SMD/SMT

Nominal Vgs :

1.5 V

Power Dissipation-Max :

3W Ta

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)