NDT014
- Mfr.Part #
- NDT014
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 2.7A SOT-223-4
- Stock
- 8,351
- In Stock :
- 8,351
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Fall Time (Typ) :
- 10 ns
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 60V
- Width :
- 3.7mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 3.4A, 10V
- Height :
- 1.7mm
- Package / Case :
- TO-261-4, TO-261AA
- Drain to Source Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Length :
- 6.7mm
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 6 ns
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Ta
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Number of Pins :
- 4
- Drain Current-Max (Abs) (ID) :
- 2.7A
- Continuous Drain Current (ID) :
- 2.8A
- Published :
- 1998
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Dual Supply Voltage :
- 60V
- Turn-Off Delay Time :
- 15 ns
- Power Dissipation :
- 3W
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Threshold Voltage :
- 1.5V
- Power Dissipation-Max :
- 3W Ta
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Termination :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 14ns
- Nominal Vgs :
- 1.5 V
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 214pF @ 30V
- Number of Terminations :
- 4
- Weight :
- 188mg
- Current Rating :
- 2.8A
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 160mOhm
- Datasheets
- NDT014

N-Channel Tape & Reel (TR) 160m Ω @ 3.4A, 10V ±20V 214pF @ 30V 5nC @ 4.5V TO-261-4, TO-261AA
NDT014L Description
This high cell density, DMOS-exclusive N-Channel logic level enhancement mode power field effect transistor is made by ON Semiconductor. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These devices are best suited for low voltage tasks that need quick switching, little in-line power loss, and resistance to transients, such as DC motor control and DC/DC conversion.
NDT014L Features
-
2.8 A, 60 V. RDS(ON) = 0.2 W @ VGS = 4.5 V
-
High density cell design for extremely low RDS(ON).
-
High power and current handling capability in a widely used surface mount package.
NDT014L Applications
-
DC motor control
-
DC/DC conversion
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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