NDS9959

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

2A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

50V

JESD-609 Code :

e3

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Mounting Type :

Surface Mount

Power - Max :

900mW

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

50V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Pulsed Drain Current-Max (IDM) :

8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

8

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.3Ohm

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

2A

Transistor Element Material :

SILICON