NDS9959

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Number of Elements :

2

Transistor Element Material :

SILICON

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

50V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Qualification Status :

COMMERCIAL

Power - Max :

900mW

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

8A

Drain-source On Resistance-Max :

0.3Ohm

FET Feature :

Standard

Number of Terminations :

8

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.5A, 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

2A

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount