NDS9958
- Mfr.Part #
- NDS9958
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 20V 3A 8-SOIC
- Stock
- 73
- In Stock :
- 73
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 3.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 525pF @ 10V
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Supplier Device Package :
- 8-SOIC
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A
- Power - Max :
- 900mW
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- FET Feature :
- Logic Level Gate
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N and P-Channel
- Datasheets
- NDS9958

NDS9958 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS9958 Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using Xiantong's proprietary technology. High battery density, DMOS technology. This very high-density process is tailored to minimize on-resistance, provides excellent switching performance, and withstands high-energy pulses in avalanche and rectifier modes. These devices are particularly suitable for low-voltage applications, such as laptop power management. Half-bridge Mator control. Mobile phones and other battery-powered circuits where the switching speed is fast. Low inline power consumption and anti-transient are required.
NDS9958 Features
N- Channel 3.5A,20V,Rp=0.1 @V=10V. P-Channel-3.5A-20VRpSN=0.1@V=-10V
High density cell design for extremely low Rpsionr
High power and current handling capability in a widely used surface mount package.
Dual (N & P-Channel)MOSFET in surface mount package
NDS9958 Applications
low-voltage applications
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