NDS9958

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Mfr.Part #
NDS9958
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N/P-CH 20V 3A 8-SOIC
Stock
73
In Stock :
73

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Drain to Source Voltage (Vdss) :
20V
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
100mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
525pF @ 10V
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Vgs(th) (Max) @ Id :
3V @ 250µA
Supplier Device Package :
8-SOIC
Current - Continuous Drain (Id) @ 25°C :
3.5A
Power - Max :
900mW
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
FET Feature :
Logic Level Gate
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N and P-Channel
Datasheets
NDS9958
Introducing Transistors - FETs, MOSFETs - Arrays onsemi NDS9958 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), NDS9958 pinout, NDS9958 datasheet PDF, NDS9958 amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi NDS9958 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDS9958


NDS9958 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

NDS9958           Description

 

These dual N-channel and P-channel enhanced mode power field effect transistors are produced using Xiantong's proprietary technology. High battery density, DMOS technology. This very high-density process is tailored to minimize on-resistance, provides excellent switching performance, and withstands high-energy pulses in avalanche and rectifier modes. These devices are particularly suitable for low-voltage applications, such as laptop power management. Half-bridge Mator control. Mobile phones and other battery-powered circuits where the switching speed is fast. Low inline power consumption and anti-transient are required.


NDS9958            Features

N- Channel 3.5A,20VRp=0.1 @V=10V. P-Channel-3.5A-20VRpSN=0.1@V=-10V

High density cell design for extremely low Rpsionr

High power and current handling capability in a widely used surface mount package.

Dual (N & P-Channel)MOSFET in surface mount package

 

NDS9958           Applications

 low-voltage applications

 




 

 


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