NDS9956A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 10V

Fall Time (Typ) :

5 ns

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

21 ns

Max Power Dissipation :

900mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

13ns

Current Rating :

3.7A

Power Dissipation :

2W

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.2A, 10V

Published :

1997

Drain to Source Breakdown Voltage :

30V

Row Spacing :

6.3 mm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Number of Pins :

8

Weight :

230.4mg

Width :

4.05mm

Nominal Vgs :

1.7 V

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

30V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.8V @ 250μA

RoHS Status :

RoHS Compliant

Dual Supply Voltage :

30V

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.7A