NDS9955
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- Mfr.Part #
- NDS9955
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 50V 3A 8-SOIC
- Stock
- 10,994
- In Stock ：
- 10,994
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Input Capacitance (Ciss) (Max) @ Vds :
- 345pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 50V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 3A, 10V
- FET Type :
- 2 N-Channel (Dual)
- FET Feature :
- Logic Level Gate
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power - Max :
- 900mW
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- NDS9955
NDS9955 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS9955 Description
SO-8 N channel enhanced mode power field effect transistors are produced using Fairchild's unique high cell density DMOS technology. This very high-density process is specially tailored to provide superswitching performance and minimize on-resistance. These devices are particularly suitable for low-voltage applications that require fast switching, such as disk drive motor-controlled battery-powered circuits. Low series power consumption and resistance to transient.
NDS9955 Features
3.0A50VR=0.130Ω@V=10V
RDN=0.200Ω @VG8=4.5V
High density cell design for extremely low Rpsion
High power and current handling capabilityin a widely used surface mount package.
Dual MOSFET in surface mount package.
NDS9955 Applications
low-voltage applications
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