NDS9948

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Factory Lead Time :

20 Weeks

Turn-Off Delay Time :

16 ns

Rise Time :

9ns

Drain to Source Breakdown Voltage :

-60V

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

394pF @ 30V

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

15 mJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Tin (Sn)

Published :

2002

Pulsed Drain Current-Max (IDM) :

10A

Current Rating :

-2.3A

FET Type :

2 P-Channel (Dual)

JESD-609 Code :

e3

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Voltage - Rated DC :

-60V

Weight :

187mg

Fall Time (Typ) :

3 ns

Lead Free :

Lead Free

Pbfree Code :

yes

Transistor Application :

SWITCHING

Turn On Delay Time :

6 ns

Mounting Type :

Surface Mount

Width :

4mm

Height :

1.5mm

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Max Power Dissipation :

2W

Rds On (Max) @ Id, Vgs :

250m Ω @ 2.3A, 10V

FET Feature :

Logic Level Gate

Number of Elements :

2

Radiation Hardening :

No

Length :

5mm

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.3A

Threshold Voltage :

-1.5V

RoHS Status :

ROHS3 Compliant

Power - Max :

900mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Nominal Vgs :

-1.5 V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON