NDS9947

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.1Ohm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

8

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Surface Mount :

yes

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Drain Current-Max (Abs) (ID) :

3.5A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Power - Max :

900mW

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

3.5A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

542pF @ 10V

DS Breakdown Voltage-Min :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

100m Ω @ 3.5A, 10V

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

15A

Series :

PowerTrench®