NDS9945

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

3.5A

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Voltage - Rated DC :

60V

Weight :

230.4mg

Radiation Hardening :

No

Published :

2017

Number of Terminations :

8

Height :

1.57mm

Resistance :

100MOhm

Power Dissipation :

1.6W

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

1.7 V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Factory Lead Time :

11 Weeks

Transistor Application :

SWITCHING

Threshold Voltage :

1.7V

Length :

4.9mm

JESD-609 Code :

e3

Number of Pins :

8

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Rise Time :

7.5ns

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

900mW

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

3V @ 250µA

Element Configuration :

Dual

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

7 ns

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

20 ns

Pulsed Drain Current-Max (IDM) :

10A

Width :

3.9mm

Max Power Dissipation :

1.6W

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Current Rating :

3.5A

Number of Elements :

2

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Turn On Delay Time :

5 ns

Rds On (Max) @ Id, Vgs :

100m Ω @ 3.5A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

60V

Pbfree Code :

yes