NDS9942
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- Mfr.Part #
- NDS9942
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N+P 20V 2.5A 8-SOIC
- Stock
- 32,343
- In Stock ：
- 32,343
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain to Source Voltage (Vdss) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 525pF @ 10V
- Mounting Type :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- FET Feature :
- Logic Level Gate
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power - Max :
- 900mW
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 1A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3A 2.5A
- Datasheets
- NDS9942
NDS9942 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS9942 Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using National's proprietary high cell density DMOS technology. This very high-density process is tailored to minimize on-resistance, provides excellent switching performance, and withstands high-energy pulses in avalanche and rectifier modes. These devices are particularly suitable for low-voltage applications, such as notebook power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient .
NDS9942 Features
N- Channel 3.020VR=0.125@V=10V P-Channel-2.5A-20V，R=0.2@Ve=-10V
High density cell design or extremely low Rpsionr
High power and current handling capability in a widely used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package
NDS9942 Applications
low-voltage applications
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