NDS9936

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

525pF @ 15V

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

5A

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

900mW

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

50m Ω @ 5A, 10V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

JESD-609 Code :

e3

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.05Ohm

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

5A

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

40A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)