NDS9936

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.05Ohm

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

50m Ω @ 5A, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

5A

Input Capacitance (Ciss) (Max) @ Vds :

525pF @ 15V

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain Current-Max (Abs) (ID) :

5A

Power - Max :

900mW

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Pin Count :

8

FET Type :

2 N-Channel (Dual)

Pulsed Drain Current-Max (IDM) :

40A

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Surface Mount :

yes