NDS9933

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.14Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

2.8A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Drain Current-Max (Abs) (ID) :

2.8A

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Elements :

2

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

140m Ω @ 2.8A, 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

10A

FET Feature :

Logic Level Gate

JESD-30 Code :

R-PDSO-G8

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 10V

FET Type :

2 P-Channel (Dual)

Terminal Form :

Gull wing

Power - Max :

900mW

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Count :

8