NDS0610
- Mfr.Part #
- NDS0610
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 120MA SOT-23
- Stock
- 295
- In Stock :
- 295
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Weight :
- 30mg
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Continuous Drain Current (ID) :
- -120mA
- Radiation Hardening :
- No
- Published :
- 2002
- Number of Elements :
- 1
- Threshold Voltage :
- -1.7V
- Turn-Off Delay Time :
- 10 ns
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 3.5V @ 1mA
- Nominal Vgs :
- -1.7 V
- Factory Lead Time :
- 8 Weeks
- Rise Time :
- 6.3ns
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -120mA
- Power Dissipation :
- 360mW
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 6.3 ns
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- -60V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- -60V
- Turn On Delay Time :
- 2.5 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 360mW Ta
- Contact Plating :
- Tin
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 60V
- Resistance :
- 10Ohm
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Height :
- 1.11mm
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Feedback Cap-Max (Crss) :
- 5 pF
- Dual Supply Voltage :
- -60V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.05mm
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 79pF @ 25V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 120mA Ta
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- NDS0610

P-Channel Tape & Reel (TR) 10 Ω @ 500mA, 10V ±20V 79pF @ 25V 2.5nC @ 10V 60V TO-236-3, SC-59, SOT-23-3
The NDS0610 P-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage
applications requiring a low current high side switch.
NDS0610 Features
? ?0.12A, ?60V. RDS(ON) = 10 ? @ VGS = ?10 V
RDS(ON) = 20 ? @ VGS = ?4.5 V
? Voltage controlled p-channel small signal switch
? High density cell design for low RDS(ON)
? High saturation current
NDS0610 Applications
This product is general usage and suitable for many different applications.
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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