NDS0610

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Pbfree Code :

yes

Weight :

30mg

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 10V

Continuous Drain Current (ID) :

-120mA

Radiation Hardening :

No

Published :

2002

Number of Elements :

1

Threshold Voltage :

-1.7V

Turn-Off Delay Time :

10 ns

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Nominal Vgs :

-1.7 V

Factory Lead Time :

8 Weeks

Rise Time :

6.3ns

Packaging :

Tape and Reel (TR)

Current Rating :

-120mA

Power Dissipation :

360mW

Transistor Application :

SWITCHING

Fall Time (Typ) :

6.3 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Voltage - Rated DC :

-60V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Drain to Source Breakdown Voltage :

-60V

Turn On Delay Time :

2.5 ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

360mW Ta

Contact Plating :

Tin

Max Junction Temperature (Tj) :

150°C

Terminal Position :

Dual

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

60V

Resistance :

10Ohm

Lead Free :

Lead Free

Mount :

Surface Mount

Height :

1.11mm

Number of Channels :

1

Transistor Element Material :

SILICON

Number of Terminations :

3

Feedback Cap-Max (Crss) :

5 pF

Dual Supply Voltage :

-60V

RoHS Status :

ROHS3 Compliant

Width :

3.05mm

Rds On (Max) @ Id, Vgs :

10 Ω @ 500mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

79pF @ 25V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Terminal Form :

Gull wing

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)