NDS0605
- Mfr.Part #
- NDS0605
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 180MA SOT-23
- Stock
- 9,908
- In Stock :
- 9,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 30mg
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Nominal Vgs :
- -1.7 V
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Dual Supply Voltage :
- -60V
- Turn On Delay Time :
- 5 ns
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- Drain to Source Breakdown Voltage :
- -60V
- Current Rating :
- -180mA
- Resistance :
- 5Ohm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 20 ns
- REACH SVHC :
- No SVHC
- Width :
- 3.05mm
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 360mW Ta
- Radiation Hardening :
- No
- Threshold Voltage :
- -1.7V
- Max Junction Temperature (Tj) :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Voltage - Rated DC :
- -60V
- Current - Continuous Drain (Id) @ 25°C :
- 180mA Ta
- Factory Lead Time :
- 8 Weeks
- Published :
- 2002
- Terminal Position :
- Dual
- Feedback Cap-Max (Crss) :
- 5 pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Fall Time (Typ) :
- 6.3 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 79pF @ 25V
- Power Dissipation :
- 360mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 2.92mm
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 180mA
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Rise Time :
- 6.3ns
- Height :
- 1.2mm
- Datasheets
- NDS0605

P-Channel Tape & Reel (TR) 5 Ω @ 500mA, 10V ±20V 79pF @ 25V 2.5nC @ 10V 60V TO-236-3, SC-59, SOT-23-3
NDS0605 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make NDS0605 P-Channel enhancement mode field effect transistors. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. They can be utilized in most applications requiring up to 180mA DC and can deliver current up to 1A with minimal effort. The NDS0605 is ideal for low-voltage applications that require a low-current high-side switch, according to NDS0605 datasheet.
NDS0605 Features
-
High saturation current
-
High density cell design for low RDS(ON)
-
?0.18A, ?60V. RDS(ON) = 5 ? @ VGS = ?10 V
-
Voltage controlled p-channel small signal switch
NDS0605 Applications
-
Load Switching
-
DC/DC converter
-
DC motor control
-
Battery protection
-
Power management control
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