NDS0605
- Mfr.Part #
- NDS0605
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 180MA SOT-23
- Stock
- 9,908
- In Stock :
- 9,908
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 1.2mm
- Width :
- 3.05mm
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Dual Supply Voltage :
- -60V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 360mW
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 5Ohm
- Rise Time :
- 6.3ns
- Nominal Vgs :
- -1.7 V
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Current Rating :
- -180mA
- Drain to Source Breakdown Voltage :
- -60V
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 60V
- Contact Plating :
- Tin
- Factory Lead Time :
- 8 Weeks
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 180mA
- Turn On Delay Time :
- 5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 79pF @ 25V
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 6.3 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 30mg
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 500mA, 10V
- Power Dissipation-Max :
- 360mW Ta
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Feedback Cap-Max (Crss) :
- 5 pF
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 180mA Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Threshold Voltage :
- -1.7V
- Published :
- 2002
- Turn-Off Delay Time :
- 20 ns
- Mounting Type :
- Surface Mount
- Length :
- 2.92mm
- Max Junction Temperature (Tj) :
- 150°C
- FET Type :
- P-Channel
- Voltage - Rated DC :
- -60V
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- NDS0605

P-Channel Tape & Reel (TR) 5 Ω @ 500mA, 10V ±20V 79pF @ 25V 2.5nC @ 10V 60V TO-236-3, SC-59, SOT-23-3
NDS0605 Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make NDS0605 P-Channel enhancement mode field effect transistors. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. They can be utilized in most applications requiring up to 180mA DC and can deliver current up to 1A with minimal effort. The NDS0605 is ideal for low-voltage applications that require a low-current high-side switch, according to NDS0605 datasheet.
NDS0605 Features
-
High saturation current
-
High density cell design for low RDS(ON)
-
?0.18A, ?60V. RDS(ON) = 5 ? @ VGS = ?10 V
-
Voltage controlled p-channel small signal switch
NDS0605 Applications
-
Load Switching
-
DC/DC converter
-
DC motor control
-
Battery protection
-
Power management control
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