NDPL100N10BG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 50A, 15V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.1W Ta 110W Tc

Number of Terminations :

3

Mounting Type :

Through Hole

Turn On Delay Time :

40 ns

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Continuous Drain Current (ID) :

100A

Rise Time :

385ns

JESD-609 Code :

e3

Fall Time (Typ) :

52 ns

FET Type :

N-Channel

Operating Temperature :

175°C TJ

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V 15V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Factory Lead Time :

6 Weeks

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Drain-source On Resistance-Max :

0.0087Ohm

Turn-Off Delay Time :

68 ns

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

1

Avalanche Energy Rating (Eas) :

147 mJ

DS Breakdown Voltage-Min :

100V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Transistor Application :

SWITCHING

Lead Free :

Lead Free