NDPL100N10BG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

40 ns

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain-source On Resistance-Max :

0.0087Ohm

Pulsed Drain Current-Max (IDM) :

400A

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

JESD-609 Code :

e3

Packaging :

Tube

Turn-Off Delay Time :

68 ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

147 mJ

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Number of Terminations :

3

Package / Case :

TO-220-3

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V 15V

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.1W Ta 110W Tc

Rise Time :

385ns

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 50V

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 50A, 15V

Fall Time (Typ) :

52 ns

Continuous Drain Current (ID) :

100A

Number of Pins :

3

Vgs (Max) :

±20V

Operating Temperature :

175°C TJ

Number of Elements :

1

Transistor Application :

SWITCHING