NDP7061

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Power Dissipation-Max :

130W Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

64A

Avalanche Energy Rating (Eas) :

500 mJ

Operating Temperature :

-65°C~175°C TJ

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

190A

Number of Terminations :

3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

1.93pF @ 25V

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Terminal Position :

Single

Surface Mount :

No

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

16m Ω @ 35A, 10V

Qualification Status :

COMMERCIAL

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.016Ohm