NDP7050
- Mfr.Part #
- NDP7050
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 75A TO220-3
- Stock
- 39,136
- In Stock :
- 39,136
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 40A, 10V
- Qualification Status :
- COMMERCIAL
- Package / Case :
- TO-220-3
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 550 mJ
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.6pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- JEDEC-95 Code :
- TO-220AB
- Terminal Finish :
- MATTE TIN
- DS Breakdown Voltage-Min :
- 50V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 50V
- Pulsed Drain Current-Max (IDM) :
- 225A
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- FET Type :
- N-Channel
- Surface Mount :
- No
- Operating Temperature :
- -65°C~175°C TJ
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 75A
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.013Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 150W Tc
- Vgs (Max) :
- ±20V
- Datasheets
- NDP7050

N-Channel Tube 13m Ω @ 40A, 10V ±20V 3.6pF @ 25V 115nC @ 10V 50V TO-220-3
NDP7050 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 550 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3.6pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 75A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 225A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 50V in order to maintain normal operation.Operating this transistor requires a 50V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
NDP7050 Features
the avalanche energy rating (Eas) is 550 mJ
based on its rated peak drain current 225A.
a 50V drain to source voltage (Vdss)
NDP7050 Applications
There are a lot of Rochester Electronics, LLC
NDP7050 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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