NDP7050

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Mfr.Part #
NDP7050
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 50V 75A TO220-3
Stock
39,136
In Stock :
39,136

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
13m Ω @ 40A, 10V
Qualification Status :
COMMERCIAL
Package / Case :
TO-220-3
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 250µA
Avalanche Energy Rating (Eas) :
550 mJ
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds :
3.6pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
JESD-30 Code :
R-PSFM-T3
Peak Reflow Temperature (Cel) :
Not Applicable
JEDEC-95 Code :
TO-220AB
Terminal Finish :
MATTE TIN
DS Breakdown Voltage-Min :
50V
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
50V
Pulsed Drain Current-Max (IDM) :
225A
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
115nC @ 10V
FET Type :
N-Channel
Surface Mount :
No
Operating Temperature :
-65°C~175°C TJ
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
75A
Reach Compliance Code :
Unknown
Drain-source On Resistance-Max :
0.013Ohm
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Transistor Element Material :
SILICON
Power Dissipation-Max :
150W Tc
Vgs (Max) :
±20V
Datasheets
NDP7050
Introducing Transistors - FETs, MOSFETs - Single onsemi NDP7050 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~175°C TJ, NDP7050 pinout, NDP7050 datasheet PDF, NDP7050 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NDP7050 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDP7050


N-Channel Tube 13m Ω @ 40A, 10V ±20V 3.6pF @ 25V 115nC @ 10V 50V TO-220-3

NDP7050 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 550 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3.6pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 75A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 225A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 50V in order to maintain normal operation.Operating this transistor requires a 50V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

NDP7050 Features


the avalanche energy rating (Eas) is 550 mJ
based on its rated peak drain current 225A.
a 50V drain to source voltage (Vdss)


NDP7050 Applications


There are a lot of Rochester Electronics, LLC
NDP7050 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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