NDB7060

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Mfr.Part #
NDB7060
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 75A D2PAK
Stock
6,277
In Stock :
6,277

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 25V
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
60V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13m Ω @ 40A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
115nC @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-65°C~175°C TJ
RoHS Status :
Non-RoHS Compliant
FET Type :
N-Channel
Power Dissipation-Max :
150W Tc
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheets
NDB7060
Introducing Transistors - FETs, MOSFETs - Single onsemi NDB7060 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-65°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, NDB7060 pinout, NDB7060 datasheet PDF, NDB7060 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NDB7060 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDB7060


N-Channel Tape & Reel (TR) 13m Ω @ 40A, 10V ±20V 3600pF @ 25V 115nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

NDB7060 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.



NDB7060 Features

75A, 60V. Roscow = 0.0130 @ VGs=10V.

Critical DC electrical parameters specifed at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an extemal Zener diode transient suppressor.

175??C maximum junction temperature rating.

High density cell design for extremely low Rosion.

TO-220 and TO-263 (D*PAK) package for both through hole

and surface mount applications.


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