NDB7051
- Mfr.Part #
- NDB7051
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 70A D2PAK
- Stock
- 2,394
- In Stock :
- 2,394
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.013Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 210A
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 50V
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 70A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Terminal Finish :
- TIN LEAD
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 35A, 10V
- Operating Temperature :
- -65°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 500 mJ
- DS Breakdown Voltage-Min :
- 50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Pbfree Code :
- No
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.93pF @ 25V
- Power Dissipation-Max :
- 130W Tc
- JESD-609 Code :
- e0
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- NDB7051

N-Channel Tape & Reel (TR) 13m Ω @ 35A, 10V ±20V 1.93pF @ 25V 100nC @ 10V 50V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDB7051 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.93pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [70A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 210A.The DS breakdown voltage should be maintained above 50V to maintain normal operation.To operate this transistor, you will need a 50V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
NDB7051 Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 210A.
a 50V drain to source voltage (Vdss)
NDB7051 Applications
There are a lot of Rochester Electronics, LLC
NDB7051 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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