NDB7051

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

50V

Operating Temperature :

-65°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

130W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.013Ohm

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

500 mJ

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

13m Ω @ 35A, 10V

Surface Mount :

yes

Number of Elements :

1

Pin Count :

3

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

70A Tc

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

50V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

70A

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Pbfree Code :

No

Input Capacitance (Ciss) (Max) @ Vds :

1.93pF @ 25V

Terminal Finish :

TIN LEAD

Vgs (Max) :

±20V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

210A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED