MW6S010GNR1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

RoHS Status :

ROHS3 Compliant

Current - Test :

125mA

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Gain :

18dB

Voltage - Rated :

68V

Base Part Number :

MW6S010

Configuration :

Single

Power Dissipation-Max (Abs) :

61.4W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

10 Weeks

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

960MHz

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Published :

2009

Surface Mount :

yes

Number of Terminations :

2

Operating Temperature (Max) :

225°C

Power - Output :

10W

HTS Code :

8541.29.00.75

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Package / Case :

TO-270BA

Transistor Type :

LDMOS

Case Connection :

SOURCE

DS Breakdown Voltage-Min :

68V

Number of Elements :

1

Voltage - Test :

28V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G2

JESD-609 Code :

e3