MW6S004NT1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Rated :

68V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature (Max) :

150°C

ECCN Code :

EAR99

Case Connection :

SOURCE

Transistor Element Material :

SILICON

Published :

2009

Polarity/Channel Type :

N-Channel

Voltage - Test :

28V

Gain :

18dB

Number of Elements :

1

Terminal Position :

QUAD

Transistor Type :

LDMOS

HTS Code :

8541.29.00.75

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

68V

Factory Lead Time :

10 Weeks

Frequency :

1.96GHz

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Power - Output :

4W

Surface Mount :

yes

Package / Case :

PLD-1.5

JESD-30 Code :

R-PQSO-N4

Packaging :

Tape and Reel (TR)

Configuration :

Single

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Finish :

Matte Tin (Sn)

Current - Test :

50mA

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

MW6S004