MW6S004NT1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Power - Output :

4W

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

150°C

Base Part Number :

MW6S004

Transistor Type :

LDMOS

JESD-30 Code :

R-PQSO-N4

JESD-609 Code :

e3

Configuration :

Single

Terminal Form :

NO LEAD

Number of Elements :

1

Voltage - Test :

28V

Peak Reflow Temperature (Cel) :

260

Current - Test :

50mA

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gain :

18dB

DS Breakdown Voltage-Min :

68V

HTS Code :

8541.29.00.75

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

QUAD

Frequency :

1.96GHz

Package / Case :

PLD-1.5

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

AMPLIFIER

Voltage - Rated :

68V

Qualification Status :

Not Qualified

Case Connection :

SOURCE

Surface Mount :

yes

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

10 Weeks

Number of Terminations :

4

Published :

2009

Packaging :

Tape and Reel (TR)