MURTA60020R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Terminations :

3

Package / Case :

Three Tower

Diode Element Material :

SILICON

Application :

SUPER FAST RECOVERY

Lifecycle Status :

Production (Last Updated: 5 months ago)

Max Reverse Voltage (DC) :

200V

Current - Average Rectified (Io) :

600A DC

Operating Temperature (Min) :

-55°C

Non-rep Pk Forward Current-Max :

4400A

Diode Configuration :

1 Pair Common Anode

Operating Temperature (Max) :

150°C

Mount :

Chassis Mount

Voltage - Forward (Vf) (Max) @ If :

1.3V @ 300A

Peak Reverse Current :

25μA

Terminal Form :

UNSPECIFIED

Factory Lead Time :

6 Weeks

Reverse Recovery Time :

200 ns

Max Surge Current :

4.4kA

Number of Elements :

2

Published :

2013

Reverse Voltage :

200V

Average Rectified Current :

600A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Number of Phases :

1

JESD-30 Code :

R-PUFM-X3

Diode Type :

Standard

Output Current-Max :

300A

Current - Reverse Leakage @ Vr :

25μA @ 50V

Case Connection :

Isolated

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Mounting Type :

Chassis Mount