MURT20010

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Operating Temperature (Min) :

-55°C

Number of Elements :

2

Voltage - Forward (Vf) (Max) @ If :

1.3V @ 100A

Output Current-Max :

100A

Case Connection :

Isolated

Diode Type :

Standard

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Reverse Voltage (DC) :

100V

Package / Case :

Three Tower

Diode Element Material :

SILICON

Current - Reverse Leakage @ Vr :

25μA @ 50V

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

Production (Last Updated: 5 months ago)

Reverse Recovery Time :

75 ns

Non-rep Pk Forward Current-Max :

2000A

Max Surge Current :

2kA

Number of Phases :

1

Operating Temperature (Max) :

150°C

Average Rectified Current :

200A

Reverse Voltage :

100V

Current - Average Rectified (Io) :

200A DC

Application :

SUPER FAST RECOVERY

Pbfree Code :

yes

ECCN Code :

EAR99

JESD-30 Code :

R-PUFM-X3

Terminal Position :

UPPER

HTS Code :

8541.10.00.80

Packaging :

Bulk

Diode Configuration :

1 Pair Common Cathode

Peak Reverse Current :

25μA

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Mount :

Chassis Mount