MURT20010R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Reverse Recovery Time :

75 ns

Diode Element Material :

SILICON

Number of Phases :

1

Diode Configuration :

1 Pair Common Anode

Number of Terminations :

3

Factory Lead Time :

6 Weeks

Non-rep Pk Forward Current-Max :

2000A

Voltage - Forward (Vf) (Max) @ If :

1.3V @ 100A

Lifecycle Status :

Production (Last Updated: 5 months ago)

Operating Temperature (Max) :

150°C

Application :

SUPER FAST RECOVERY

Max Reverse Voltage (DC) :

100V

Current - Average Rectified (Io) :

200A DC

Operating Temperature (Min) :

-55°C

Diode Type :

Standard

Reverse Voltage :

100V

Current - Reverse Leakage @ Vr :

25μA @ 50V

Case Connection :

Isolated

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Mount :

Chassis Mount

Average Rectified Current :

200A

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Package / Case :

Three Tower

Max Surge Current :

2kA

Packaging :

Bulk

Mounting Type :

Chassis Mount

Peak Reverse Current :

25μA

JESD-30 Code :

R-PUFM-X3

Number of Elements :

2

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

Output Current-Max :

100A