MURT40060R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Terminal Position :

UPPER

Current - Reverse Leakage @ Vr :

25μA @ 50V

Max Repetitive Reverse Voltage (Vrrm) :

600V

Max Forward Surge Current (Ifsm) :

3.3kA

Package / Case :

Three Tower

Diode Configuration :

1 Pair Common Anode

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Mount :

Chassis Mount

Reverse Recovery Time :

240 ns

Diode Type :

Standard

Max Reverse Voltage (DC) :

600V

REACH SVHC :

No SVHC

Number of Elements :

2

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Phases :

1

Forward Current :

200A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Voltage - Forward (Vf) (Max) @ If :

1.7V @ 200A

Element Configuration :

Common Anode

Number of Terminations :

3

Max Surge Current :

3.3kA

Max Operating Temperature :

175°C

Number of Pins :

3

Packaging :

Bulk

Reverse Voltage :

600V

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Element Material :

SILICON

Application :

SUPER FAST RECOVERY

Current - Average Rectified (Io) :

400A DC

Peak Reverse Current :

25μA

Average Rectified Current :

400A

Published :

2016

Forward Voltage :

1.7V

Min Operating Temperature :

-40°C

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)