MURT20060R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Diode Type :

Standard

Current - Reverse Leakage @ Vr :

25μA @ 50V

Voltage - Forward (Vf) (Max) @ If :

1.7V @ 100A

Mount :

Chassis Mount

Number of Phases :

1

Max Surge Current :

2kA

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Package / Case :

Three Tower

Diode Configuration :

1 Pair Common Anode

Published :

2013

Reverse Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Reverse Voltage (DC) :

600V

Packaging :

Bulk

JESD-30 Code :

R-PUFM-X3

Operating Temperature (Min) :

-55°C

Mounting Type :

Chassis Mount

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Element Material :

SILICON

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

Case Connection :

Isolated

Reverse Recovery Time :

160 ns

Operating Temperature (Max) :

150°C

Average Rectified Current :

200A

Non-rep Pk Forward Current-Max :

2000A

Output Current-Max :

100A

Peak Reverse Current :

25μA

Factory Lead Time :

6 Weeks

Lifecycle Status :

Production (Last Updated: 5 months ago)

Application :

SUPER FAST RECOVERY

Current - Average Rectified (Io) :

200A DC

Number of Elements :

2