MUR10060CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Application :

SUPER FAST RECOVERY

Max Repetitive Reverse Voltage (Vrrm) :

600V

Number of Phases :

1

Number of Elements :

2

Reverse Voltage :

600V

REACH SVHC :

No SVHC

Reverse Recovery Time :

110 ns

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Operating Temperature - Junction :

-55°C~150°C

Factory Lead Time :

6 Weeks

Voltage - Forward (Vf) (Max) @ If :

1.7V @ 50A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Forward Surge Current (Ifsm) :

400A

Max Surge Current :

400A

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

Number of Terminations :

2

Current - Average Rectified (Io) :

100A DC

HTS Code :

8541.10.00.80

Min Operating Temperature :

-40°C

Package / Case :

Twin Tower

Mount :

Chassis Mount

Number of Pins :

2

Diode Element Material :

SILICON

Terminal Form :

UNSPECIFIED

Max Reverse Voltage (DC) :

600V

Published :

2003

Current - Reverse Leakage @ Vr :

25μA @ 50V

Average Rectified Current :

100A

Diode Configuration :

1 Pair Common Anode

Peak Reverse Current :

25μA

Max Operating Temperature :

175°C

Packaging :

Bulk

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Diode Type :

Standard

Forward Current :

50A

Terminal Position :

UPPER

Element Configuration :

Common Anode

ECCN Code :

EAR99

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Forward Voltage :

1.7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)