MTZJT-779.1B
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- Mfr.Part #
- MTZJT-779.1B
- Manufacturer
- ROHM Semiconductor
- Package / Case
- DO-204AG, DO-34, Axial
- Datasheet
- Download
- Description
- DIODE ZENER 9.1V 500MW MSD
- Stock
- 41,705
- In Stock ：
- 41,705
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Diodes - Zener - Single
- Case Connection :
- Isolated
- Terminal Finish :
- TIN/TIN COPPER
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Power Dissipation :
- 500mW
- Reference Voltage :
- 9.1V
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 500mW
- Peak Reflow Temperature (Cel) :
- 260
- Diode Element Material :
- SILICON
- Number of Pins :
- 2
- Impedance :
- 20Ohm
- Zener Voltage :
- 8.79V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Working Test Current :
- 5mA
- Voltage Tolerance :
- 3%
- Working Voltage :
- 9.1V
- Additional Feature :
- High Reliability
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- RoHS Status :
- ROHS3 Compliant
- Peak Reverse Current :
- 500nA
- Zener Current :
- 20mA
- HTS Code :
- 8541.10.00.50
- Max Operating Temperature :
- 150°C
- Tolerance :
- ±3%
- Impedance-Max :
- 20Ohm
- Package / Case :
- DO-204AG, DO-34, Axial
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- Max Reverse Leakage Current :
- 500nA
- Current - Reverse Leakage @ Vr :
- 500nA @ 6V
- Polarity :
- Unidirectional
- Number of Elements :
- 1
- Min Operating Temperature :
- -65°C
- Packaging :
- Tape and Box (TB)
- Voltage - Rated DC :
- 9.1V
- Diode Type :
- ZENER DIODE
- Power Rating :
- 500mW
- Datasheets
- MTZJT-779.1B
ZENER DIODE 20Ohm ±3% 8.79V 500nA @ 6V 500mW 2 Terminations DO-204AG, DO-34, Axial
MTZJT-779.1B Overview
The reverse leakage current for this electrical device should be 500nA @ 6V.A maximum reverse leakage current of 500nA is observed.Zeners have a zener current of 20mA, so their design is highly flexible.This device should be operated at 5mA on the working test voltage.To function properly, this device needs a reverse voltage peak of 500nA.
MTZJT-779.1B Features
reverse leakage current of 500nA @ 6V
500nA @ 6V is the maximum voltage (Tol)
Reverse leakage current reaches 500nA
the zener current of 20mA
the working test voltage to 5mA
minimal dynamic impedance is 5mA
MTZJT-779.1B Applications
There are a lot of ROHM Semiconductor
MTZJT-779.1B applications of zener single diodes.
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