MTW32N20EG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

200V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

75 ns

Number of Elements :

1

Nominal Vgs :

4 V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Published :

2006

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

200V

Mount :

Through Hole

Rise Time :

120ns

Continuous Drain Current (ID) :

32A

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

JESD-609 Code :

e3

Fall Time (Typ) :

91 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.9mm

Terminal Finish :

Tin (Sn)

Pin Count :

3

Power Dissipation-Max :

180W Tc

Package / Case :

TO-247-3

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-247AE

Resistance :

75mOhm

Qualification Status :

Not Qualified

Height :

20.3mm

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Peak Reflow Temperature (Cel) :

260

Width :

5.3mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Power Dissipation :

180W

Packaging :

Tube

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Element Configuration :

Single

Turn On Delay Time :

25 ns

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

75m Ω @ 16A, 10V

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

32A

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ